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SQM110N04-03L
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SPECIFICATIONS (T C = 25 °C, unless otherwise noted)
Vishay Siliconix
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
V DS
V GS(th)
I GSS
V GS = 0, I D = 250 μA
V DS = V GS , I D = 250 μA
V DS = 0 V, V GS = ± 20 V
V GS = 0 V
V DS = 40 V
40
1.5
-
-
-
2.0
-
-
-
2.5
± 100
1.0
V
nA
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V
V DS = 40 V, T J = 125 °C
-
-
50
μA
V GS = 0 V
V DS = 40 V, T J = 175 °C
-
-
250
On-State Drain Current a
I D(on)
V GS = 10 V
V DS ??? 5 V
120
-
-
A
V GS = 10 V
I D = 30 A
-
0.0027
0.0035
Drain-Source On-State Resistance a
R DS(on)
V GS = 10 V
V GS = 10 V
I D = 30 A, T J = 125 °C
I D = 30 A, T J = 175 °C
-
-
-
-
0.0057
0.0070
?
V GS = 4.5 V
I D = 20 A
-
0.0041
0.0053
Forward Transconductance b
g fs
V DS = 15 V, I D = 30 A
-
106
-
S
Dynamic b
Input Capacitance
C iss
-
4252
5315
Output Capacitance
C oss
V GS = 0 V
V DS = 25 V, f = 1 MHz
-
854
1070
pF
Reverse Transfer Capacitance
Total Gate Charge c
C rss
Q g
-
-
472
93
590
140
Gate-Source Charge c
Q gs
V GS = 10 V
V DS = 20 V, I D = 110 A
-
14.6
-
nC
Gate-Drain Charge c
Q gd
-
19.2
-
Gate Resistance
Time c
Turn-On Delay
Rise Time c
Turn-Off Delay Time c
Fall Time c
R g
t d(on)
t r
t d(off)
t f
f = 1 MHz
V DD = 20 V, R L = 0.18 ?
I D ? 110 A, V GEN = 10 V, R g = 1 ?
0.5
-
-
-
-
1.1
15
13
52
16
1.7
23
20
78
24
?
ns
Source-Drain Diode Ratings and Characteristics b
Pulsed Current a
I SM
-
-
480
A
Forward Voltage
V SD
I F = 100 A, V GS = 0
-
0.9
1.5
V
Notes
a. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S11-2035-Rev. C, 17-Oct-11
2
Document Number: 64719
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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